Resist stripper composition
US6774097B2 · kind B2 · utility
3Cited by
7References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2002 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Oct 25, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/425
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a resist stripper composition that is used to remove resists during semiconductor device manufacturing processes such as for large size integrated circuits, very large size integrated circuits, etc. The resist stripper composition comprises 3 to 10 wt % of an organic amine compound, 30 to 60 wt % of a solvent selected from a group consisting of DCMAc, DMF, DMI, NMP, etc., 30 to 60 wt % of water, 1 to 10 wt % of catechol, resorcin or a mixture thereof and 1 to 10 wt % of a C4-6 straight polyhydric alcohol.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.