Superconductor gate semiconductor channel field effect transistor

US6774463B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Praveen Chaudhari · Briarcliff Manor, US
• Richard J. Gambino · Yorktown Heights, US
• Eti Ganin · Peekskill, US
• Roger Koch · Amawalk, US
• Lia Krusin-Elbaum · Dobbs Ferry, US
• Robert Benjamin Laibowitz · Peekskill, US
• George A. Sai-Halasz · Providence, US
• Yuan-Chen Sun · Hsinchu, TW
• Matthew R. Wordeman · Mahopac, US

Key dates

• Filing date: Feb 24, 1992
• Grant date: Aug 10, 2004
• Expiry date: Feb 23, 2017

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S505/873

Abstract

In a Field Effect Transistor (FET) with a semiconductor channel the use of a high Tc oxide superconductor material in the gate electrode provides both control of parasitic resistance and capacitance and a proper work function when operated at a temperature below the Tc. The 1-2-3 compound oxide superconductors with the general formula Y1Ba2Cu3O7-y where y is approximately 0.1 have the ability in use in FET's to provide convenient work functions, low resistance and capacitance, and to withstand temperatures encountered in processing as the FET is being manufactured.