Internal voltage source generator in semiconductor memory device
US6774712B2 · kind B2 · utility
14Cited by
5References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2002 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Dec 31, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F1/465
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
In this circuit, an external voltage source is supplied or down converted in response to a normal operating mode to provide the internal voltage source of a first level to the internal circuit. The external voltage source is converted to a voltage of a second level, lower than the first level, in response to a low consumption power mode having a complementary relation with the normal mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.