Magnetic memory device employing giant magnetoresistance effect
US6775183B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 22, 2002 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Oct 22, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory cell has a first conductive layer or a first stack of two or more conductive layers having at least one first magnetic layer with a first magnetic moment, a second conductive layer or a second stack of two or more conductive layers having least one second magnetic layer with a second magnetic moment, and a third non-magnetic layer or a third stack of two or more non-magnetic layers, that is arranged between and contacting said first layer or stack and said second layer or stack and allows a non-tunneling current to pass. Furthermore, the magnetic memory cell comprises a current control element allowing a current of up to at least a predetermined writing current amount to pass across the cell in a first direction perpendicular to the layer planes, and prohibiting a current to pass across the cell in a second direction opposite to said first direction, unless the current amount in the second direction is higher than a predetermined reading current amount, which reading current amount is lower than said writing amount. The extensions of said layers or stacks in a direction perpendicular to the layer planes, as well as the materials of said layers or stacks are adapte…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.