Semiconductor light emitting device and manufacturing method thereof
US6775310B2 · kind B2 · utility
20Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 2002 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | May 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8142
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
On a semiconductor substrate (1), a double hetero structure portion (6) in which an active layer (4) having smaller band gap is sandwiched between semiconductor layers (3, 5) having larger band gap than that of the active layer (4) is formed. A light reflection film (9) is formed at least a part of side walls of the double hetero structure portion (6). As a result, a semiconductor light emitting device that light which leaks from side wall of light emitting area in a chip is reduced and emission light can be outputted efficiently can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.