Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect
US6776893B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2000 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Nov 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/423
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A copper electroplating bath and a method to plate substrates with the bath are provided. The bath and method are particularly effective to plate electronic components such as semiconductive wafer VLSI and ULSI interconnects with void-free fill copper plating for circuitry forming vias and trenches and other small features less than 0.2 microns with high aspect ratios. The copper bath contains a bath soluble organic divalent sulfur compound, and a bath soluble polyether compound such as a block copolymer of polyoxyethylene and polyoxypropylene, a polyoxyethylene or polyoxypropylene derivative of a polyhydric alcohol and a mixed polyoxyethylene and polyoxypropylene derivative of a polyhydric alcohol. A preferred polyether compound is a mixed polyoxyethylene and polyoxypropylene derivative of glycerine. A preferred copper bath also contains a pyridine compound derivative.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.