Getter materials for deoxygenating ammonia/oxygen gas mixtures at low temperature
US6776970B1 · kind B1 · utility
Inventors
Key dates
| Filing date | Oct 31, 1997 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Oct 31, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01C1/024
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for removing oxygen from ammonia at low temperature is described. In one embodiment, oxygen contaminated ammonia is contacted with a getter material that includes iron and manganese that sorbs oxygen to yield ammonia that is substantially oxygen free. In one embodiment, the process of contacting ammonia with the getter material takes place at about 25° C. In another embodiment the weight ratio between iron and manganese is about 7:1. In another embodiment, the getter material is dispersed on an inert support of specific surface greater than 100 m2/g. In one embodiment, impure ammonia is contacted with getter material including iron and manganese that sorbs oxygen and with a drying agent that absorbs water to yield deoxygenated anhydrous ammonia. In yet another embodiment, an apparatus consisting of a gas inlet, gas purification chamber and gas outlet that deoxygenates ammonia when charged with getter material that includes iron and manganese is described. In one embodiment, getter material and drying agent are mixed together inside the gas purification chamber. In another aspect a method for producing semiconductor devices with high purity ammonia is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.