Plasma processing method and apparatus
US6777037B2 · kind B2 · utility
80Cited by
17References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2001 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Sep 6, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/515
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing method and apparatus are provided for processing the surface of a semiconductor device or the like through the effect of plasma. A pulsed plasma discharge is performed by switching on and off the high frequency electric power for generating the plasma with a specified off period of the plasma generation, to control an inflow amount of positive and negative charges to sparse and dense portions of device patterns and suppress an electric potential on a gate oxide film. Thereby, a highly accurate etching process with no charging damage can be carried out.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.