Conductive etch stop for etching a sacrificial layer
US6777258B1 · kind B1 · utility
5Cited by
10References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 28, 2002 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Jun 28, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0132
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In one embodiment a micro device is formed by depositing a sacrificial layer over a metallic electrode, forming a moveable structure over the sacrificial layer, and then etching the sacrificial layer with a noble gas fluoride. Because the metallic electrode is comprised of a metallic material that also serves as an etch stop in the sacrificial layer etch, charge does not appreciably build up in the metallic electrode. This helps stabilize the driving characteristic of the moveable structure. In one embodiment, the moveable structure is a ribbon in a light modulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.