Non-reducable, low temperature dielectric ceramic composition, capacitor and method of preparing
US6777363B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2002 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Feb 7, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/96
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Multilayer ceramic chip capacitors which satisfy X5R (−55 to 85° C., &Dgr;C=±15%) requirements and which are compatible with reducing atmosphere sintering conditions so that base metals such as nickel and nickel alloys may be used for internal electrodes are made in accordance with the invention.The multilayer ceramic chip capacitor comprises alternately staked, dielectric ceramic layers and internal electrode layers wherein dielectric ceramic layers comprise per 100 mol of BaTiO3, BaTiO3; MgCO3: 0.2 to 3.0 mol; at least one selected from Y2O3, Ho2O3, Dy2O3 and Yb2O3: 0.05 to 1.5 mol; Cr2O3: 0.1 to 1.5 mol; BaxCa(1−x)SiO3 (provided that 0≦x≦1): 0.2 to 3.0 mol; and Mn2V2O7: 0.01 to 1.5 mol. The multilayer ceramic chip capacitor of the present invention has a high dielectric constant, satisfies X5R characteristics can be sintered at a low temperature of 1,200 to 1,250° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.