Semiconductor display device and method of manufacturing therefor
US6777716B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2000 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Feb 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.