Bi-directional semiconductor component

US6777748B1 · kind B1 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Robert Plikat · Eningen unter Achalm, DE
• Wolfgang Feiler · Reutlingen, DE

Key dates

• Filing date: May 9, 2002
• Grant date: Aug 17, 2004
• Expiry date: May 9, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/411
• WIPO field: Engines, pumps, turbines
• WIPO sector: Mechanical engineering

Abstract

A bidirectional semiconductor component having two symmetrical MOS transistor structures integrated laterally in a substrate and connected antiserially, their drain terminals being connected to one another. A zone having the same type of conductivity as the drain region yet a higher doping than that of the drain region is situated upstream from a pn junction of one of the MOS transistors in a junction area with the drain region.