Capacitive type microelectromechanical RF switch
US6777765B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2002 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | May 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H59/0009
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A capacitive type MEMS switch having a conductor arrangement comprised of first and second RF conductors deposited on a substrate. A bridge member having a central enlarged portion is positioned over the conductor arrangement. In one embodiment, the first RF conductor has an end defining an open area in which is positioned a pull down electrode, with the end of the first RF conductor substantially surrounding the pull down electrode. In another embodiment, two opposed RF conductors, each having ends with first and second branches, define an open area in which a pull down electrode is positioned. A dielectric layer is deposited on the conductor arrangement such that when a pull down voltage is applied to the pull down electrode, the switch impedance is significantly reduced so as to allow signal propagation between the RF conductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.