Semiconductor optical component and a method of fabricating it
US6777768B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2002 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Sep 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3215
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor optical component is disclosed which includes a semiconductor material confinement layer containing acceptor dopants such that the doping is p-type doping. The confinement layer is deposited on another semiconductor layer and defines a plane parallel to the other semiconductor layer. Furthermore, the p-type doping concentration of the confinement layer has at least one gradient significantly different from zero in one direction in the plane. A method of fabricating the component is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.