Method for manufacturing active matrix substrate
US6778232B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2002 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Sep 30, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136236
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a step for forming a contact through hole in a protective film that covers a Thin Film Transistor (TFT) to connect a source electrode of the TFT and a pixel electrode to each other, location of a later-formed contact through hole is designed to be apart not less than 2.0 &mgr;m from location of the opening of an overcoat layer, which opening is formed on the protective film. This construction forces the opening of a novolac type photosensitive resist to be positioned inside the location of the opening of the overcoat layer and therefore, the contact through hole formed in the protective film is able to have a tapered cross sectional profile that is never affected by the opening of the overcoat layer, allowing for stable connection between the source electrode and the pixel electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.