Plasma deposition device for forming thin film
US6779482B2 · kind B2 · utility
15Cited by
4References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2001 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Apr 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32532
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma deposition device 1 comprises electrodes 13 mounted on an electrode substrate 11, gas introducing holes 12 provided between said electrodes 13 for introducing material gas G to the interior, a deposition substrate 30 provided to oppose to said electrodes 13 from a predetermined distance d, and a power source 60 generating plasma from said material gas by providing energy thereto, wherein material gas G is resolved to active species R deposited on said deposition substrate 30, characterized in applying voltage to adjacent electrodes 13 so as to generate discharge DC.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.