Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US6780239B2 · kind B2 · utility
20Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Oct 16, 2001 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Jan 29, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/406
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crystal growth method, comprising the steps of: a) bringing a nitrogen material into a reaction vessel in which a mixed molten liquid comprising an alkaline metal and a group-III metal; and b) growing a crystal of a group-III nitride using the mixed molten liquid and the nitrogen material brought in by the step a) in the reaction vessel, wherein a provision is made such as to prevent a vapor of the alkaline metal from dispersing out of the reaction vessel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.