Stencil mask and method of producing the same, semiconductor device produced using the stencil mask and method of producing the semiconductor device
US6780659B2 · kind B2 · utility
3Cited by
3References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 1, 2002 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Feb 25, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A stencil mask is disclosed which can be produced by performing pattern correction in a practically applicable comparatively short period of time. When stencil mask pattern data are corrected by a stress analysis, displacement amounts are calculated for those of stencil hole patterns which have a size equal to or greater than a predetermined size. As a result, stencil mask pattern data having corrected patterns are obtained in a comparatively short period of time which can be applied industrially. By producing a stencil mask based on the patterns, a stencil mask in which a desired pattern is formed is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.