Semiconductor device and its production method
US6780698B2 · kind B2 · utility
1Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2002 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Aug 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor device which comprises causing a dopant present in a semiconductor substrate to segregate in the surface of said semiconductor substrate, thereby forming a thin layer which has a higher dopant concentration than said substrate. The thin layer formed by segregation prevents punch-through which occurs as the result of miniaturization of MOSFET. This method permits economical delta doping without sacrificing the device characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.