Semiconductor light emitting device and method for manufacturing the same
US6781160B1 · kind B1 · utility
29Cited by
4References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2003 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Jun 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
A semiconductor light emitting device and a method for manufacturing the same are disclosed. The semiconductor comprises a light scattering-deflecting layer located on a semiconductor layer having a scraggly surface. Light is deflected due to the difference of refractive index when the light enters the semiconductor layer from the light scattering-deflecting layer, and the light scatters when the light enters the scraggly surface of the semiconductor layer, thereby enabling the semiconductor light emitting device to emit more light so as to increase the light emitting efficiency of the semiconductor light emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.