Non-gated thyristor device
US6781161B1 · kind B1 · utility
9Cited by
23References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2003 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Apr 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/104
Abstract
A semiconductor device with two epitaxial layers formed on a substrate. The middle layer of epitaxial material can be formed thin and with an appropriate doping concentration to provide a low avalanche breakdown voltage with a negative resistance characteristic. The top layer of epitaxial material is doped with the same concentration as the substrate to provide a two-terminal thyristor device with symmetrical bidirectional operating characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.