Photodetector with three transistors
US6781169B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 12, 2002 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Feb 12, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A monolithic photodetector including a photodiode, a precharge MOS transistor, a control MOS transistor, and a read MOS transistor, the photodiode and the precharge transistor being formed in a same substrate of a first conductivity type, the photodiode including a first region of the second conductivity type formed under a second region of the first conductivity type more heavily doped than the substrate, and under a third region of the second conductivity type, more heavily doped than the first region, the second and third regions being separate, the first region forming the source region of the second conductivity type of the precharge MOS transistor, the second and third regions being connected, respectively, to a fixed voltage and to the gate of the control transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.