Resistor structure
US6781506B2 · kind B2 · utility
11Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2003 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Jan 13, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12438
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is a resistor structure for embedding in a dielectric material including a thin film resistive material disposed on a surface of a conductive layer wherein the surface has an isotropic surface roughness having a Rz (din) value of 3 to 10 &mgr;m and a peak-to-peak wavelength of 2 to 20 &mgr;m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.