Tunneling magnetoresistive sensor with spin polarized current injection
US6781801B2 · kind B2 · utility
20Cited by
25References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2002 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Aug 12, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A tunneling magnetoresistive (TMR) stack configured to operate in a current-perpendicular-to-plane (CPP) mode has a plurality of layers including a spin valve and a barrier layer. The spin valve is used to inject a spin polarized sense current into the barrier layer for increasing a magnetoresistive (MR) ratio of the TMR stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.