Semiconductor laser structure and method of manufacturing same
US6782026B2 · kind B2 · utility
0Cited by
23References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2002 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Jul 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/06226
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser structure includes a substrate and an active region having at least one active laser layer. The active region is included in a ridge protruding from an exposed surface of the substrate. The ridge extends in the direction of the laser cavity and includes at least two opposed and electrically connected lateral extensions defining respective metal bonding pads distributed along the length of the laser cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.