Patent · US Expired

Method of making <200 nm wavelength fluoride crystal lithography/laser optical elements

US6782075B2 · kind B2 · utility

11Cited by
5References
9Claims
0Family size

Assignee

Inventor

Key dates

Filing dateAug 26, 2002
Grant dateAug 24, 2004
Priority date
Expiry dateDec 6, 2022

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B1/02
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The invention provides for the making of <200 nm wavelength fluoride crystal optical elements from selected fluoride single crystals of determined quality.The invention relates to a method of determining the optical quality of a fluoride single crystal.The method according to the invention is characterised in that it comprises the following steps:(a) irradiating at least one volume element of the fluoride single crystal, along at least one given family of crystalline planes with a hard X-ray beam, in order to obtain a picture of the diffraction in transmission mode of the hard X-rays across this at least one volume element along this at least one family of crystalline planes,(b) studying the picture obtained in step (a), and(c) calculating the mosaicity of the at least one volume element along the at least one family of crystalline planes, from the study of step (b).The invention finds application in the field of the optical industry.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.