Method of producing polycrystalline thin film of MgO
US6783636B2 · kind B2 · utility
2Cited by
1References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 6, 2001 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Mar 23, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A polycrystalline thin film of MgO is formed on a substrate by an ion sputtering process wherein the thin film is obtained by irradiating a target with an ion beam to dislodge particles from the target and deposit the particles on the substrate. The film is preferably formed in an atmosphere at a reduced pressure of 3.0×10−2 Pa or lower while keeping the substrate temperature at 300° C. or lower.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.