Control of solid state dimensional features
US6783643B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Jun 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A solid state structure having a surface is provided and exposed to a flux, F, of incident ions under conditions that are selected based on: where C is concentration of mobile adatoms at structure surface, r is vector surface position, t is time, T1 is number of adatoms created per incident ion, D is adatom diffusivity, &tgr;trap is average lifetime of an adatom before adatom annihilation occurs at a structure surface defect characteristic of structure material, and &sgr;C is cross-section for adatom annihilation by incident ions characteristic of selected ion exposure conditions. Ion exposure condition selection controls sputtering of the structure surface by incident ions to transport, within the structure including the structure surface, structure material to a feature location, in response to the ion flux exposure, to produce a feature substantially by locally adding structure material to the feature location.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.