Nitride-based semiconductor laser device and method for the production thereof
US6784010B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Nov 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The nitride-based semiconductor laser device 10 has a stacked structure comprising a first contacting layer 14, a first cladding layer 16, an active layer 20, a second cladding layer 24, a second contacting layer 26 and a second electrode 30 which are consecutively stacked, the second cladding layer 24 comprises a lower layer 24A and an upper layer 24B, the first cladding layer 14, the active layer 20 and the lower layer 24A of the second cladding layer have a mesa structure, the upper layer 24B of the second cladding layer and the second contacting layer 26 have a ridge structure, an insulating layer 40 covering at least part of each of both side surfaces of the upper layer 24B of the second cladding layer is formed on the portions of the lower layer 24A of the second cladding layer which portions correspond to the top surface of the mesa structure, and further, a metal layer 42 having substantially the same width as the mesa structure is formed on the top surface of the insulating layer 40 and the top surface of the second electrode 30 such that the metal layer 42 continues from one top surface to the other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.