Method of creating a high performance organic semiconductor device
US6784017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Aug 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/631
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A high temperature thermal annealing process creates a low resistance contact between a metal material and an organic material of an organic semiconductor device, which improves the efficiency of carrier injection. The process forms ohmic contacts and Schottky contacts. Additionally, the process may cause metal ions or atoms to migrate or diffuse into the organic material, cause the organic material to crystallize, or both. The resulting organic semiconductor device has enhanced operating characteristics such as faster speeds of operation. Instead of using heat, the process may use other forms of energy, such as voltage, current, electromagnetic radiation energy for localized heating, infrared energy and ultraviolet energy. An example enhanced organic diode comprising aluminum, carbon C60, and copper is described, as well as example insulated gate field effect transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.