Method of etching shaped features on a substrate
US6784110B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Oct 1, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Nov 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of etching a substrate, a substrate is provided in a process zone, the substrate having a pattern of features comprising dielectric covering semiconductor. In a first stage, an energized first etching gas is provided in the process zone, the energized first etching gas having a first selectivity of etching dielectric to semiconductor of at least about 1.8:1, wherein the dielectric is etched preferentially to the semiconductor to etch through the dielectric to at least partially expose the semiconductor. In a second stage, an energized second etching gas is provided in the process zone, the energized second etching gas having a second selectivity of etching dielectric to semiconductor of less than about 1:1.8, wherein the semiconductor is etched preferentially to the dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.