Monatomic layer passivation of semiconductor surfaces
US6784114B1 · kind B1 · utility
2Cited by
3References
51Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2003 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Feb 28, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates generally to a method of improving the performance of solid state devices, and specifically provides methods for passivating a semiconductor surfaces with a monolayer of passivating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.