Graded base GaAsSb for high speed GaAs HBT
US6784450B2 · kind B2 · utility
67Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Jul 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
Abstract
A heterojunction bipolar transistor is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor includes a graded base layer formed from antimony. The graded base allows the heterojunction bipolar transistor to establish a quasi-electric field to yield an improved cutoff frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.