Vertical power component manufacturing method
US6784465B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 25, 2003 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Apr 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/032
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a vertical power component on a substrate formed of a lightly-doped silicon wafer, including the steps of boring on the lower surface side of the substrate a succession of holes perpendicular to this surface; diffusing a dopant from the holes, of a second conductivity type opposite to that of the substrate; and boring similar holes on the upper surface side of the substrate to define an isolating wall and diffuse from these holes a dopant of the second conductivity type with a high doping level, the holes corresponding to the isolating wall being sufficiently close for the diffused areas to join laterally and vertically.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.