Monolithcally integrated semiconductor component
US6784487B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 26, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Aug 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
The invention concerns a monolithically integrated semiconductor component, having a first charge carrier region of a first charge carrier doping; at least two second charge carrier regions with opposite charge carrier doping, patterned within the first charge carrier region at a spacing from one another, and third charge carrier regions, with the first charge carrier doping, patterned within the second charge carrier regions, a PN transition being short-circuited between the second charge carrier regions and the third charge carrier regions via a contacting area (source connection), the first charge carrier region being equipped with a contact (drain connection), and the second charge carrier regions being invertable by means of a contacting area in the region between the first charge carrier region and the third charge carrier region; and having at least one Schottky diode connected in parallel with the charge carrier region and the charge carrier region. Provision is made for the first charge carrier region to have a further contacting area, this contacting area being additionally doped near the surface, depending on the doping concentration of the first region, with a further n…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.