Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus
US6784509B2 · kind B2 · utility
40Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Aug 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/30
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.