Integrated circuit device comprising an inductor with high quality coefficient
US6784518B1 · kind B1 · utility
5Cited by
19References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2000 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Apr 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
Abstract
The integrated circuit comprises an inductor made at a metallization level of the circuit and a buried layer situated in the substrate of the integrated circuit under the said inductor, and connection means linking the inductor to the buried layer. The connection means are configured in such a way as to ensure the same potential in terms of dynamic response between the inductor and the buried layer. This equipotential is ensured by a transistor in a follower type arrangement made in the substrate and connected in parallel with the stray capacitances under the inductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.