Heat transfer structure for a semiconductor device utilizing a bismuth glass layer
US6784538B2 · kind B2 · utility
3Cited by
7References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Mar 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is a semiconductor apparatus having at least a part of a semiconductor device conjugated to a metal material for heat sink via an electric insulating material, wherein said electric insulating material is a bismuth glass layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.