Semiconductor device including a diffusion layer formed between electrode portions
US6784557B2 · kind B2 · utility
8Cited by
8References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Dec 2, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device includes a semiconductor element having an electrode formed on a surface thereof, and a metal wiring formed on the surface of the semiconductor element and electrically connected to the electrode. The metal wiring has an external electrode portion functioning as an external electrode. A thickness of the external electrode portion is greater than that of a non-electrode portion of the metal wiring, i.e., a portion of the metal wiring other than the external electrode portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.