Magnetoresistance sensor with reduced side reading
US6785103B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Sep 26, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance sensor includes a substrate and a sensor structure deposited upon the substrate and having a first lateral side and a second lateral side. The sensor structure includes a layered transverse biasing structure, a free layer deposited upon the layered transverse biasing structure, and a cap layer deposited upon a central portion of the free layer but not upon a side portion of the free layer adjacent to each lateral side. Longitudinal hard biasing structures are disposed laterally adjacent to the lateral sides of the sensor structure. Each longitudinal hard biasing structure has a magnetic seed layer deposited upon the substrate, the respective lateral side of the sensor structure, and the respective side portion of the free layer. A magnetic hard bias layer is deposited upon the seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.