MRAM and access method thereof
US6785154B2 · kind B2 · utility
9Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Aug 14, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2263
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory (MRAM) circuit block and access method thereof are disclosed herein which includes a circuit for sensing a data write current passing through a bitline 32 and, for generating a stop signal for stopping a data write current supply to the bitline 32 and a write wordline 30 after data is written in an magnetic tunnel junction (MTJ) element 44. Further, when data to be written to the storage element is the same as the data already stored therein, no write current is supplied to the write wordline 30, thereby saving power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.