LED stack manufacturing method and its structure thereof
US6786390B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2003 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Mar 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
A LED stacking manufacturing method and its structure thereof, mainly uses a stacking method to integrate the epitaxial layer and the high-thermal-conductive substrate by twice bonding process, and the converted epitaxial layer of the temporary bonded substrate replaces the epitaxial wafer growth substrate, and the second bonded layer of the etch stop layer of the epitaxial layer is bonded with the second bonded layer of the high-thermal-conductive substrate to form an alloy layer with permanent connection, and then the temporary bonded substrate is removed, such that the process completes the integration of the epitaxial layer and the high-thermal-conductive substrate and makes the ohmic contact layer to face upward to provide a better reliability and efficiency of optical output of the LED.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.