Methods for manufacturing a microstructured sensor
US6787047B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2000 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Jun 10, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/226
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for manufacturing a sensor, the sensor including a three-dimensional interdigital electrode arrangement positioned on a substrate, comprising applying a temperature sensing resistor onto the substrate by sputtering a first adhesion layer and a first metallic layer onto the substrate, applying a first resist layer to the first metallic layer, applying and structuring a first resist material on the first metallic layer, and after structuring, etching the first metallic layer in resist free areas; and applying a three-dimensional interdigital electrode arrangement onto the substrate by sputtering a second adhesion layer and a second metallic layer onto the substrate, applying and structuring a second resist material only to second metal layer, after the structuring, etching the second metallic layer in resist free areas to form valleys, and after etching the second metallic layer, applying an electroplating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.