Dielectric element and method for fabricating the same
US6787412B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2003 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Jul 17, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/957
Abstract
It is disclosed a dielectric element comprising a lower electrode, a dielectric layer, and an upper electrode which are provided on a substrate, in which at least one of the electrodes is a Pt layer, a Ru layer is used as a base layer for the Pt layer. In the fabrication of the dielectric element, the Pt layer is formed by electroplating, a photoresist pattern is used as a plating mask, and an Ru layer is formed as a seed layer. The present invention makes it possible to provide a dielectric element using Pt as an electrode material, that is capable of easily forming a Pt electrode having excellent electrical characteristics without generating voids or seams, that is capable of forming a fine pattern, and that does not occur contamination in a processing chamber, and a method for fabricating a dielectric element of having the characteristics mentioned above.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.