Film thickness measurement using electron-beam induced x-ray microanalysis
US6787773B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 23, 2000 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Oct 23, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2814
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An X-ray micoanalysis test system comprising a beam generator which induces X-rays to emanate from a semiconductor device containing film stacks. The charged particle beam will penetrate at least two layers of a film stack on a semiconductor device so that these layers may be tested. The X-rays will be detected using multiple X-ray detectors that detect X-ray photons having a specific energy level. The X-rays will then be used to analyze the characteristics of the semiconductor device. Each of the multiple X-ray detectors may be wavelength dispersive system (WDS) detectors. The present invention also provides a method for measuring film stack characteristics on a semiconductor device. The method for measuring includes directing an electron beam towards the semiconductor device so that the electron beam penetrates at least a conductive film layer and a liner layer, detecting the X-rays which are caused to emanate from the device with multiple X-ray detectors that detect X-ray photons having a specific energy level. The present invention also provides a method and a computer-readable medium which determines a film stack's properties using the data collected with the test system of th…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.