Group-III nitride semiconductor light-emitting device and production method thereof
US6787814B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 22, 2001 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Jun 22, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
Abstract
A high emission intensity group-III nitride semiconductor light-emitting device obtained by eliminating crystal lattice mismatch with substrate crystal and using a gallium nitride phosphide-based light emitting structure having excellent crystallinity. A gallium nitride phosphide-based multilayer light-emitting structure is formed on a substrate via a boron phosphide (BP)-based buffer layer. The boron phosphide-based buffer layer is preferably grown at a low temperature and rendered amorphous so as to eliminate the lattice mismatch with the substrate crystal. After the amorphous buffer layer is formed, it is gradually converted into a crystalline layer to fabricate a light-emitting device while keeping the lattice match with the gallium nitride phosphide-based light-emitting part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.