Diffused junction photodetector and fabrication technique

US6787818B2 · kind B2 · utility

Assignee

• The Boeing Company · US

Inventors

• Charles B. Morrison · Forest, US
• Rengarajan Sudharsanan · Santa Clarita, US
• Moran Haddad · Calabasas, US
• Dimitri D. Krut · Sylvia Park, US
• Joseph C. Boisvert · Thousand Oaks, US
• Richard R. King · Thousand Oaks, US
• Nasser H. Karam · Tustin, US

Key dates

• Filing date: Jun 14, 2002
• Grant date: Sep 7, 2004
• Expiry date: Jun 14, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548

Abstract

A diffused junction semiconductor (12) for detecting light (48) at a predetermined wavelength is provided including a base (30) and an epitaxial structure (32) electrically coupled to the base (30). The epitaxial structure (32) forms a p-n junction (38) in the base (30). The epitaxial structure (32) includes at least one diffusion layer (50) electrically coupled to the base (30). At least one of the diffusion layers (50) contributes impurities in at least a portion of the base (30) to form the p-n junction (38) during growth of the epitaxial structure (32). A method for performing the same is also provided.