Electric semiconductor element with a contact hole

US6787905B1 · kind B1 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Alfred Goerlach · Tübingen, DE
• Marion Gebhard · Reutlingen, DE

Key dates

• Filing date: Jul 25, 2002
• Grant date: Sep 7, 2004
• Expiry date: Jul 25, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76816
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An electric semiconductor component includes a monocrystalline semiconductor substrate made of silicon, for example, an insulation layer arranged on the surface of the semiconductor substrate and penetrated by a contact hole in at least one location and a contact element that contacts the semiconductor substrate through the contact hole and is made of a material in which the semiconductor material of the substrate is soluble in an anisotropic dissolving process. The edges of the contact hole are configured as diffusion stop structures.