Schottky structure in GaAs semiconductor device
US6787910B2 · kind B2 · utility
7Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2002 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Nov 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a Schottky Structure in gallium arsenide (GaAs) semiconductor device, which comprises a gallium arsenide (GaAs) semiconductor substrate, a titanium (Ti) layer on a surface of said gallium arsenide (GaAs) semiconductor substrate to form Schottky contact, a diffusion barrier layer on a surface of said titanium (Ti) layer to block metal diffusion, and a first copper layer on a surface of said diffusion barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.