Method of programming memory cells by breaking down antifuse elements
US6788607B2 · kind B2 · utility
11Cited by
6References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2003 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Apr 3, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a row of antifuse memory cells includes breaking down at least N antifuse elements in the memory cells. The breakdown includes the application of a breakdown voltage to the anode of each antifuse element. The antifuse elements are broken down sequentially by groups of P antifuse elements, with P being less than N and at least equal to 1. The antifuse elements of a same group simultaneously receive the breakdown voltage. The breakdown of a next group of antifuse elements immediately takes place after the breakdown of a previous group of antifuse elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.